Home > SiC Substrate >

6inch SiC Epitaxial Wafer Diameter 150mm 4H-N Type 4H-P Type For 5G Communication

Product Categories

SHANGHAI FAMOUS TRADE CO.,LTD

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

6inch SiC Epitaxial Wafer Diameter 150mm 4H-N Type 4H-P Type For 5G Communication

Name: 6inch SiC Epitaxial Wafer Diameter 150mm 4HN Type 4HP Type For 5G Communication
Brand: ZMSH
Price: 1 USD

Wholesale 6inch SiC Epitaxial Wafer Diameter 150mm 4H-N Type 4H-P Type For 5G Communication from china suppliers

Brand Name : ZMSH

Model Number : 6inch SiC Epitaxial Wafer

Certification : rohs

Place of Origin : CHINA

MOQ : 25

Price : by case

Payment Terms : T/T

Supply Ability : 1000pcs per month

Delivery Time : 5-8weeks

Packaging Details : Package in 100-grade cleaning room

Crystal Structure : 4H-SiC single crystal

Size : 6inch

Diameter : 150mm

Resistivity : 0.015–0.15 Ω·cm (adjustable)

Edge Exclusion : 3mm

Application : New Energy Vehicles，Industrial & Energy

Contact Now

Technical summary of 6inch SiC epitaxial wafer

6inch SiC Epitaxial Wafer Diameter 150mm 4H-N Type 4H-P Type For 5G Communication

6inch SiC Epitaxial Wafer Diameter 150mm N type P type for 5G Communication

As a core material for silicon carbide (SiC) power device manufacturing, the 6-inch 4H-SiC epitaxial wafer is based on a 4H-N-type SiC substrate, grown using chemical vapor deposition (CVD) to achieve high uniformity, low defect density, and exceptional electrical performance. Its technical advantages include:

· Crystal Structure: (0001) silicon-face orientation with a 4° offcut to optimize lattice matching and minimize micropipe/stacking fault defects.

· Electrical Performance: N-type doping concentration precisely controlled between 2×10¹⁴–2×10¹⁹ cm⁻³ (±14% tolerance), achieving resistivity adjustable from 0.015–0.15 Ω·cm via in-situ doping technology.

· Defect Control: Surface defect density <25 cm⁻² (TSD/TED), triangular defect density <0.5 cm⁻², ensured by magnetic-field-assisted growth and real-time monitoring.

Leveraging domestically developed CVD equipment clusters, ZMSH achieves full-process control from substrate processing to epitaxial growth, supporting rapid small-batch trials (minimum 50 wafers) and customized solutions for applications in new energy vehicles, photovoltaic inverters, and 5G base stations.

Key parameters for 6inch SiC epitaxial wafers

Parameter	Specification
Diameter	150 mm (±0.2 mm)
Thickness	50–100 μm (high voltage)
Doping Concentration (N)	2×10¹⁴–2×10¹⁹ cm⁻³
Surface Defect Density	<25 cm⁻² (TSD/TED)
Resistivity	0.015–0.15 Ω·cm (adjustable)
Edge Exclusion	3 mm

Core characteristics of 6inch SiC epitaxial wafers

1. Material Performance 

Thermal Conductivity: >350 W/m·K, 6inch SiC epitaxial wafers ensuring stable operation at >200°C, 3× higher than silicon.
Breakdown Field Strength: >3 MV/cm, enabling 10kV+ high-voltage devices with optimized thickness (10–100 μm).
Carrier Mobility: Electron mobility >900 cm²/(V·s), 6inch SiC epitaxial wafers enhanced by gradient doping for faster switching.

2. Process Advantages 

Thickness Uniformity: <3% (9-point test) via dual-temperature zone reactors, supporting 5–100 μm thickness control.
Surface Quality: Ra <0.5 nm (atomic force microscopy, AFM), 6inch SiC epitaxial wafers optimized by hydrogen etching and chemical mechanical polishing (CMP).
Defect Density: Micropipe density <1 cm⁻², minimized through reverse-bias annealing.

3. Customization Capabilities

Crystal Orientation: 6inch SiC epitaxial wafers support (0001) silicon-face, (11-20) carbon-face, and quasi-homoepitaxial growth for trench MOSFETs and JBS diodes.
Packaging Compatibility: 6inch SiC epitaxial wafers offer double-sided polishing (Ra <0.5 nm) and wafer-level packaging (WLP) for TO-247/DFN.

Key Applications of 6inch SiC epitaxial wafers

1. Renewable Energy Systems 

· Wind Turbine Inverters: 1700V SiC epitaxial wafers for DC-AC conversion in large-scale wind turbines, enhancing energy conversion efficiency to 99.2% and reducing DC-side losses by 15% .

· Hybrid Energy Storage: 10kV SiC modules for bidirectional DC-DC converters in grid-scale battery storage systems, enabling seamless energy transfer between solar/wind and grid networks.

2. Data Center Power Infrastructure 

· Ultra-Efficient PDU: 650V SiC MOSFETs integrated into power distribution units (PDUs), achieving 98% efficiency and reducing cooling costs by 20% through lower heat dissipation .

· Smart Power Grids: 3300V SiC thyristors for high-voltage DC (HVDC) transmission in data center microgrids, minimizing transmission losses to <0.3%.

3. Industrial Motor Drives 

· High-Power AC Drives: 1200V SiC IGBT modules for industrial motor drives in steel manufacturing, enabling variable-speed control with 97% efficiency and reducing energy waste by 12% .

· Electric Forklifts: 400V SiC-based inverters for compact, high-performance electric forklifts, extending operational time by 30% via reduced energy consumption.

4. Aerospace Power Systems 

· Auxiliary Power Units (APUs): Radiation-tolerant 6H-SiC epitaxial wafers for APU inverters in aircraft, operating reliably at -55°C to 225°C and passing MIL-STD-883 radiation hardness tests.

ZMSH's Services of 6inch SiC epitaxial wafers

ZMSH services & product portfolio Our core business encompasses comprehensive coverage of 2–12-inch SiC substrates and epitaxial wafers, including 4H/6H-N-type, HPSI, SEMI-type, and 3C-N-type polytypes, with advanced capabilities in custom fabrication (e.g., through-hole cutting, double-side polishing, wafer-level packaging) and end-to-end solutions spanning CVD epitaxy, ion implantation, annealing, and device validation. Leveraging 75% domestically sourced CVD equipment, we deliver cost-efficient solutions, achieving 25% lower production costs compared to global competitors.

FAQ of 6inch SiC epitaxial wafers

1. Q: What are the primary applications of 6-inch SiC epitaxial wafers?

A: They are widely used in new energy vehicles (main drive inverters, fast charging systems), photovoltaic inverters, 5G communication base stations, and industrial motor drives, enhancing energy efficiency and reducing power consumption .

2. Q: How to minimize defect density in 6-inch SiC epitaxial wafers?

A: Defect density is controlled through C/Si ratio optimization (0.9), growth temperature regulation (1590°C), and magnetic-field-assisted growth, reducing fatal defects (e.g., triangular defects) to <0.4 cm⁻² .

Tags: #2inch 3inch 4inch 6inch, #SiC Epitaxial Wafers, #Silicon Carbide#4H-N, #Conductive, #Production Grade, #MOS Grade, #Diameter 150mm, #N type/P type, #5G Communication

Product Tags: